ECE 410 Homework 4 -Solutions Spring 2008
Problem 3 A silicon p-n junction diode is doped with NA = 10 16 cm-3 and N D = 5x10 14 cm-3. a) Determine the built-in potential of this device b) Assuming Ψ0=0.6V and no reverse bias, calculate the depletion width into the p-type region, xp in μm. c) Assuming Ψ0=0.6V and no reverse bias, calculate the depletion width into the n-type region, xn in μm. d) …